GMBT5401 datasheet(2/3 Pages) GSME

2 / 3 page

桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Electronics Co.,Ltd.

Co.,Ltd.

GMBT5401(销售型號 MMBT5401)

■

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(TA

=25

25℃ unless

unless

unless otherwise

otherwise

otherwise noted

noted

noted 如無特殊說明，溫度爲 25℃))))

Characteristic

特性參數

Symbol

符號

Min

最小值

Max

最大值

Unit

單位

Collector-Emitter Breakdown Voltage(3)

集電極-發射極擊穿電壓(Ic=-1.0mAdc,IB=0)

V(BR)CEO

-150

—

Vdc

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓(Ic=-100μAdc,IE=0)

V(BR)CBO

-160

—

Vdc

Emitter-Base Breakdown Voltage

發射極基極擊穿電壓(IE=-10μAdc,Ic=0)

V(BR)EBO

-6.0

—

Vdc

Emitter Cutoff Current

發射極截止電流(VEB=-3.0Vdc,Ic=0)

IEBO

—

-50

nAdc

Collector Cutoff Current

集電極截止電流(VCB=-120Vdc,IE=0)

ICBO

—

-50

nAdc

DC Current Gain 直流電流增益

HFE

—

(Ic=-1.0mAdc,VCE=-5.0Vdc)

—

(Ic=-10mAdc,VCE=-5.0Vdc)

240

(Ic=-50mAdc,VCE=-5.0Vdc)

—

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

(Ic=-10mAdc, IB=-1.0mAdc)

(Ic=-50mAdc, IB=-10mAdc)

VCE(sat)

—

-0.2

-0.5

Vdc

Base-Emitter Saturation Voltage

基極-發射極飽和壓降

(Ic=-10mAdc, IB=-1.0mAdc)

(Ic=-50mAdc, IB=-5.0mAdc)

VBE(sat)

—

-1.0

Vdc

Current-Gain-Bandwidth Product 電流增益-帶寬乘積

(Ic=-10mAdc,VCE=-10Vdc,f=100MHz)

100

300

MHz

Output Capacitance 輸出電容

(VCB=-10.0Vdc, IE=0, f=1.0MHz)

Cobo

—

6.0

Small-Signal Current Gain 小信號電流增益

(VCE=-10Vdc, IC=-1.0mAdc, f=1.0KHz)

hfe

200

—

Noise Figure 噪声係數

(VCE=-5.0Vdc, IC=-200μAdc,Rs=1.0kΩf=1.0KHz)

—

8.0

１．FR-5=1.0×0.75×0.062in.

２．Alumina=0.4×0.3×0.024in.99.5%alumina.

３．Pulse Width<300us;Duty Cycle<2.0%.

GMBT5401 Datasheet(PDF) 2 Page - Guilin Strong Micro-Electronics Co., Ltd.

GMBT5401 Datasheet(HTML) 2 Page - Guilin Strong Micro-Electronics Co., Ltd.

Html Pages

1 2 3

Datasheet Download

Link URL