MMBTA94 datasheet(1/2 Pages) GSME

Part #	MMBTA94

Description	PNP High Voltage Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	GSME [Guilin Strong Micro-Electronics Co., Ltd.]

Direct Link	http://www.gsme.com.cn

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桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Electronics Co.,Ltd.

Co.,Ltd.

GMBTA94(销售型號 MMBTA94)

■

FEATURES

FEATURES 特點

PNP

High Voltage Transistor

■

MAXIMUM

MAXIMUM RATINGS

RATINGS

RATINGS 最大額定值

Characteristic 特性參數

Symbol 符號

Rating 額定值

Unit 單位

Collector-Emitter Voltage 集電極-射極電壓

VCEO

-400

V

Collector-Base Voltage 集電極-極電壓

VCBO

-400

V

Emitter-Base Voltage 發射極基極電壓

VEBO

-7

V

Collector Current 集電極電流

Ic

-200

mA

Device Dissipation 耗散功率

PD

225

mW

Junction and Storage Temperature 結溫和儲存溫度

TJ,Tstg

-55to+125

℃

■

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS 電特性

(T

(TA

A

=25

=25℃ unless

unless

unless otherwise

otherwise

otherwise noted

noted

noted 如無特殊說明，溫度爲 25℃))))

Characteristic 特性參數

Symbol 符號 Min 最小值 Max 最大值 Unit 單位

Collector-Emitter Breakdown Voltage

集電極-射極擊穿電壓(IC=-1mA,IB=0)

V(BR)CEO

-400

—

V

Collector-Base Breakdown Voltage

集電極-基極擊穿電壓(IC=-100µA,IE=0)

V(BR)CBO

-400

__

V

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓(IE= -100µA ,IC=0)

V(BR)EBO

-7

—

V

Collector Cutoff Current 集電極截止電流

(VCB=-400VIE=0)

ICBO

__

-500

nA

DC Current Gain 直流電流增益

(Ic=-10mA,VCE=-10.0V)

HFE

40

240

—

Collector-Emitter Saturation Voltage

集電極-發射極飽和壓降

(Ic=-20mA, IB=-2mA)

VCE(sat)

—

-0.6

V

Current-Gain-Bandwidth Product

電流增益帶寬乘積

(Ic=-10mA,VCE=-20V,f=30MHz)

fT

50

__

MHz

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MMBTA94 Datasheet(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

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