GMP3205 datasheet(2/2 Pages) GSME

2 / 2 page

桂林斯壯微電子有限責任公司

Guilin

Guilin Strong

Strong

Strong Micro-Electronics

Micro-Electronics

Micro-Elec tronics Co.,Ltd.

Co.,Ltd.

GMP3205

▉

Electerical

lecterical

lecterical C

Characteristics

haracteristics

haracteristics 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Min

最小值

Typ

典型值

Max

最大值

Unit

單位

Drain-Source Breakdown Voltage

漏極-源極擊穿電壓(ID =250uA,VGS=0V)

BVDSS

—

Gate Threshold Voltage

栅極開启電壓(ID =250uA,VGS= VDS)

VGS(th)

—

Zero Gate Voltage Drain Current

零栅壓漏極電流(VGS=0V, VDS= 55V)

IDSS

—

Gate Body Leakage

栅極漏電流(VGS=+20V, VDS=0V)

IGSS

—

+100

Static Drain-Source On-State Resistance

静态漏源導通電阻(ID=62A,VGS=10V)

RDS(ON)

—

8.0

mΩ

Source Drain Current

源極-漏極電流

ISD

—

110

Source Drain Current (pulsed)

源極-漏極電流(脉冲)

ISDM

—

390

Diode Forward Voltage Drop

内附二極管正向壓降(ISD=62A,VGS=0V)

VSD

—

1.3

Input Capacitance 輸入電容

(VGS=0V, VDS=25V,f=1MHz)

CISS

—

3247

Common Source Output Capacitance

共源輸出電容(VGS=0V, VDS=25V,f=1MHz)

COSS

—

781

Gate Source Charge 栅源電荷密度

(VDS=44V, ID=62A, VGS=10V)

Qgs

—

Gate Drain Charge 栅漏電荷密度

(VDS=44V, ID=62A, VGS=10V)

Qgd

—

Turn-On Delay Time 開启延迟時間

(VDS=28V, ID=62A, RGEN=4.5Ω,VGS=10V)

td(on)

—

Turn-On Rise Time 開启上升時間

(VDS=28V, ID=62A, RGEN=4.5Ω,VGS=10V)

—

101

—

Turn-Off Delay Time 關断延迟時間

(VDS=28V, ID=62A, RGEN=4.5Ω,VGS=10V)

td(off)

—

Turn-On Fall Time 開启下降時間

(VDS=28V, ID=62A, RGEN=4.5Ω,VGS=10V)

—

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