S8550 datasheet(2/2 Pages) GSME

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桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

S8550

■

ELECTRICAL CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Test Condition

測試條件

Min.

最小值

Typ.

典型值

Max.

最大值

Unit

單位

Collector Cutoff Current

集電極截止電流

ICBO

VCB=-30V,IE=0

—

-0.1

Emitter Cutoff Current

發射極截止電流

IEBO

VEB=-5V,IC=0

—

-0.1

Collector-Base Breakdown Voltage

集電極

-基極擊穿電壓

V(BR)CBO

IC=-100μA

-40

—

Collector-Emitter Breakdown Voltage

集電極

-發射極擊穿電壓

V(BR)CEO

IC=-10mA

-25

—

Emitter-Base Breakdown Voltage

發射極

-基極擊穿電壓

V(BR)EBO

IE=-100μA

-5

—

DC Current Gain

直流電流增益

HFE(1)

VCE=-1V,

IC=-100mA

—

400

—

HFE(2)

VCE=-1V,

Ic=-500mA

—

Collector-Emitter Saturation Voltage

集電極

-發射極飽和壓降

VCE(sat)

IC=-500mA,

IB=-50mA

—

-0.6

Base-Emitter Saturation Voltage

基極

-發射極飽和壓降

VBE(sat)

IC=-500mA,

IB=-50mA

—

-1.2

Base-Emitter Voltage

基極

-發射極電壓

VBE

VCE=-1V,

IC=-10mA

—

-0.8

-1.0

Transition Frequency

特徵頻率

VCE=-5V,

IC=-10mA

100

120

—

MHz

Collector Output Capacitance

輸出電容

Cob

VCB=-10V,IE=0,

f=1MHz

—

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