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MSDT75 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # MSDT75
Description  Three Phase Bridge Thyristor
PDF  5 Pages
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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MSDT75 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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MSDT75
Document Number: MSDT75
www.smsemi.com
Jan.15,2015
2
◆Thyristor
Maximum Ratings
Electrical and Thermal Characteristics
Symbol
Item
Conditions
Values
Units
Min.
Typ.
Max.
VTM
Peak On-State Voltage, max.
T=25℃ IT =300A
1.70
V
IRRM/IDRM
Repetitive Peak Reverse
Current, max. / Repetitive Peak
Off-State Current, max.
TVJ=TVJM ,VR=VRRM ,VD=VDRM
20
mA
VTO
Threshold voltage
TVJ = TVJM
0.9
V
rT
Slope resistance
3.0
mΩ
VGT
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
3
V
IGT
Gate Trigger Current, max.
TVJ =25℃ , VD =6V
150
mA
VGD
Max. required DC gate voltage
not to trigger
TVJ =125℃ , VD =2/3VDRM
0.25
V
IGD
Max. required DC gate current
not to trigger
TVJ =125℃ , VD =2/3VDRM
6
mA
IL
Maximum latching current
TVJ =25℃ , RG=33Ω
300
600
mA
IH
Maximum holding current
TVJ =25℃ , VD =6V
150
250
mA
tgd
Gate controlled delay time
TVJ=25℃,IG=1A,diG/dt=1A/us
1
us
tq
Circuit commutated turn-off time
TVJ = TVJM
100
us
Rth(j-c)
Thermal Impedance, max.
Junction to Case
0.30
℃
/W
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.10
℃
/W
Symbol
Item
Conditions
Values
Units
ITAV
Average On-State Current
Tc=99℃, Single Phase half wave
180
o conduction
75
A
ITSM
Surge On-State Current
TVJ=45℃ t=10ms (50Hz), sine
VR=0
920
A
i
2t
Circuit Fusing Consideration
4200
A
2s
Visol
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1 min
3000
V
Tvj
Operating Junction Temperature
-40 to +125
℃
Tstg
Storage Temperature
-40 to +125
℃
Mt
Mounting Torque
To terminals(M5)
3±15%
Nm
Ms
To heatsink(M5)
3±15%
Nm
di/dt
Critical Rate of Rise of On-State
Current
TVJ=TVJM, VD=1/2VDRM ,IG =100mA
diG/dt=0.1A/μs
150
A/μs
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM,VD=2/3VDRM,linear voltage
rise
500
V/μs



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