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Die Characteristics

DIE DIMENSIONS:

(2600

µm x 2600µm x 533µm ±51µm)

102 x 102 x 21mils

±2mil

METALLIZATION:

Type: Al Si Cu

Thickness: 10.0k

Å

SUBSTRATE POTENTIAL:

Unbiased (Silicon on Sapphire)

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 8.0k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

182

PROCESS:

CMOS SOS

Metallization Mask Layout

ACTS541T

(16) Y2

NC

A2 (4)

(14) Y4

(15) Y3

A3 (5)

NC

A4 (6)

NC

A5 (7)

(17) Y1

NC

ACTS541T