NDF08N50Z

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2

THERMAL RESISTANCE

Parameter

Symbol

NDF08N50Z

Unit

Junction−to−Case (Drain)

3.6

°C/W

Junction−to−Ambient Steady State (Note 3)

50

3. Insertion mounted

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

500

V

Breakdown Voltage Temperature Co-

efficient

Reference to 25°C,

0.6

V/°C

Drain−to−Source Leakage Current

25°C

1

mA

150°C

50

Gate−to−Source Forward Leakage

±10

mA

ON CHARACTERISTICS (Note 4)

Static Drain−to−Source

On−Resistance

0.69

0.85

W

Gate Threshold Voltage

3.0

3.9

4.5

V

Forward Transconductance

6.0

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 5)

f = 1.0 MHz

730

912

1095

pF

Output Capacitance (Note 5)

95

120

140

Reverse Transfer Capacitance

(Note 5)

15

27

35

Total Gate Charge (Note 5)

16

31

46

nC

Gate−to−Source Charge (Note 5)

3

6.2

9

Gate−to−Drain (“Miller”) Charge

(Note 5)

8

17

25

Plateau Voltage

6.3

V

Gate Resistance

3.0

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

13

ns

Rise Time

23

Turn−Off Delay Time

31

Fall Time

29

Diode Forward Voltage

1.6

V

Reverse Recovery Time

295

ns

Reverse Recovery Charge

1.85

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

5. Guaranteed by design.