© API Technologies Corp. Proprietary Information

|

www.apitech.com

|

micro.apitech.com

|

+1.888.553.7531

|

MicrowaveSales@apitech.com

Page #

Rev Date:

30 to 512 MHz High Power, Class AB Design for Military Communications

Part Number: QBS-598

Broadband 100 Watt GaN Power Amplifier

5/9/2014

1

Features

Notes:

1.

Specification ratings are based on

measurements in a 50 ohm system at a

nominal DC power of +28 V.

2.

3.

Maximum Operating Case Temperature is

defined as the baseplate temperature

which, if exceeded for extended periods,

could result in premature unit failure.

This data is provided for user reliability

information. This may or may not

represent the maximum temperature for

electrical parameter specifications.

Absolute Maximum Ratings

Mechanical Specifications

Parameter

Unit

Typical

25°C

Min/Max

-40°C to +55°C

Frequency Range

MHz

30 - 512

30 - 512

dB

32

29 min.

Input Return Loss

dB

-17

-10 min.

Noise Figure

dB

6.0

7.5 max.

dBm

+50

+49 min.

dBm

+51

+50 min.

dBc

-17

-15 max.

dBc

-11

-10 max.

Spurious Signals

dBc

< -70

—

DC Voltage

Vdc

+28

+22 to +32

DC Current (Quiescent)

A

0.6

1.5 max.

A

9.0

10.0 max.

PA Enable

TTL

Logic 1: Active / Logic 0: Current < 0.25A

PA Enable Switching Time

µsec

—

20

Parameter

Specification

Comments

Package (non-hermetic)

API Dwg: 080-25517

6061-T6 Al Alloy

Finish

Clear Iridite

MIL-DTL-5541F, Class 3

RF In / Out Connectors

SMA Female

4-Hole Flange Mount

DC/CTRL Connector

15 Pin D-Sub (Male)

Standard Density

Parameter

Specification

DC Voltage

+32.0 Vdc

RF Input Power

+27 dBm

Operating Case

Storage Temperature

API Technologies’ Model QBS-598 is a high power, class AB amplifier utilizing the latest GaN technology to offer broadband

performance from 30 to 512 MHz in support of critical communication requirements for both commercial and military

applications. The two stage push-pull design incorporates a microprocessor, and a high efficiency DC to DC converter to

promote operation over a wide DC input voltage range of +22 to +32 VDC. Over this power supply window, the amplifier draws

9 amps at rated output power for 1dB compression, which is typically 100W, and has a saturated gain of approximately 30 dB.

The integrated microprocessor allows for power supply sequencing, transistor bias optimization, temperature compensation,

and fault monitoring. This rugged, high reliability GaN based amplifier is configured in a lightweight aluminum housing with an

integrated heat sink. It is capable of performing in adverse environments and will not be damaged operating into a 10:1 load

mismatch at full rated power.

• 100 Watts Typical Output Power @ P1dB

• Push-Pull Configuration

• Microprocessor Based Control

• Integrated Heat Sink

• Lightweight Package; 1.25 lbs. Max