2SB806-R-HF datasheet(1/3 Pages) KEXIN

Part #	2SB806-R-HF

Description	PNP Transistors

PDF	3 Pages

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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1 / 3 page

SMD Type

Transistors

1

hFE Classification(1)

Features

High collector to emitter voltage: VCEO -120V.

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Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-120

V

Collector-emitter voltage

VCEO

-120

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-0.7

A

Collector current (pulse) *1

IC(pu)

-1.2

A

Collector power dissipation

Pc

2

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55 to +150

*1. PW 10ms,duty cycle 50%

* PW 350µs,duty cycle 2%

■

Classification of hfe(1)

●

=

■

Absolute Maximum Ratings Ta = 25℃

■

Electrical Characteristics Ta = 25℃

■

Electrical Characteristics Ta

= 25℃

≤

℃

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

Type

2SB806-R-HF

2SB806-Q-HF

2SB806-P-HF

Range

90-180

135-270

200-400

Marking

KR F

KQ F

KP F

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE= 0

-120

Collector- emitter breakdown voltage

VCEO

Ic=- 1 mA， IB= 0

-120

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC= 0

-5

Collector-base cut-off current

ICBO

VCB= -120 V , IE= 0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage *

VCE(sat) IC=-500 mA, IB=-50mA

-0.6

Base - emitter saturation voltage *

VBE(sat) IC=-500 mA, IB=-50mA

-1.5

Base - emitter voltage *

VBE

VCE= -10V, IC= -10mA

-0.55

-0.68

VCE= -1V, IC= -100mA

90

200

400

VCE= -1V, IC= -5mA

45

200

Collector output capacitance

Cob

VCB= -10V, IE=0,f=1MHz

14

pF

Transition frequency

fT

VCE= -10V, IC= -10mA

75

MHz

DC current gain *

hFE

V

uA

V

●

Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

PNP Transistors

2SB806-HF

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2SB806-R-HF Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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