NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION

The

µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band

to the UHF band.

FEATURES

•

•

•

Flat-lead 6-pin thin-type ultra super minimold

•

Built-in 2 transistors (2

× 2SC5006)

ORDERING INFORMATION

Part Number

Package

Quantity

Supplying Form

µPA810TC

Flat-lead 6-pin

Loose products

Embossed tape 8 mm wide.

thin-type ultra

(50 pcs)

Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to

super minimold

perforation side of the tape.

µPA810TC-T1

Taping products

(3 kp/reel)

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

µPA810TC. Unit sample quantity is 50 pcs.)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3V

Collector Current

100

mA

Total Power Dissipation

200 in 1 element

mW

230 in 2 elements

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

Note

× 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2

× 2SC5006)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

Printed in Japan

Document No.

P14550EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

©

1999

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.