BC849W_15 datasheet(2/3 Pages) KEXIN

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SMD Type

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Transistors

NPN Transistors

BC849W ~ BC850W

(KC849W ~ KC850W)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

VCB= 30 V , IE= 0

0.1

VCB= 30 V , IE= 0 ,TJ = 150℃

0.5

VCB= 50 V , IE= 0

0.1

VCB= 50 V , IE= 0 ,TJ = 150℃

0.5

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

IC=10 mA, IB=0.5mA

250

IC=100 mA, IB=5mA (Note.1)

600

Base - emitter saturation voltage

VBE(sat) IC=100 mA, IB=5mA (Note.1)

1.2

VCE= 5V, IC= 2 mA

580

700

VCE= 5V, IC= 10 mA

770

200

450

420

800

Collector output capacitance

Cob

VCB= 10V, IE=ie=0,f=1MHz

Emitter output capacitance

Coe

VEB= 0.5V, IC=ic=0,f=1MHz

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 10 Hz to 15.7 kHz

IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

Transition frequency

VCE= 5V, IC= 10mA,f=1MHz

100

MHz

VCE= 5V, IC= 2mA

Noise Figure

Collector-emitter saturation voltage

VCE(sat)

Base - emitter voltage

VBE

Ic= 1 mA， IB= 0

Collector-base cut-off current

BC849W

Collector-base cut-off current

BC850W

ICBO

DC current gain

Collector- base breakdown voltage

Collector- emitter breakdown voltage

VCBO

VCEO

Ic= 100 μA， IE= 0

hFE

Note.1: Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

BC849BW,BC850BW

BC849CW,BC850CW

BC849W

BC850W

BC849W

BC850W

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Marking

BC849BW

BC849CW

BC850BW

BC850CW

Range

200-450

420-800

200-450

420-800

Marking

2B*

2C*

2F*

2G*

BC849W Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

BC849W Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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