2SB710A-R datasheet(2/2 Pages) KEXIN

2 / 2 page

SMD Type

www.kexin.com.cn

Transistors

PNP Transistors

2SB710A

■

Typical Characterisitics

VCE(sat) - IC

VBE(sat) IC

hFE

PC - Ta

VCE

Cob

VCB

VCER RBE

120

240

200

160

120

Ambient temperature Ta (°C)

–

–4

–8

–6

−1200

−1000

−800

−600

−400

−200

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

IB =

−10 mA

Collector-emitter voltage VCE (V)

T a = 25°

−10

−8

−6

−4

−2

−800

−700

−600

−500

−400

−300

−200

−100

Base current IB (mA)

V CE =

−10 V

T a = 25°

− 0.001

−1

− 0.01

− 0.1

−1

−10

−100

−1000

Collector current IC (mA)

I C/IB = 10

25°

−25°C

T a=75°

−1

− 0.1

−1

−10

−100

−10

−100

−1000

T a =

−25°C

25°

75°

Collector current I C(mA)

IC /IB = 10

− 0.01

600

500

400

300

200

100

−1

−10

V CE =

−10 V

− 0.01

− 0.1

Collector current IC (A)

T a = 75°

25°

−25°C

240

200

160

120

100

Emitter current IE (mA)

V CB =

−10 V

T a = 25°

−1

−10

−100

Collector-base voltage VCB (V)

IE = 0

f= 1 MHz

T a = 25°

100

1000

−120

−100

−80

−60

−40

−20

Base-emitter resistance RBE (kΩ)

IC =

−2 mA

T a = 25°

2SB0710A

2SB710A-R Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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