2SB1172-P datasheet(2/2 Pages) KEXIN

2 / 2 page

SMD Type

www.kexin.com.cn

Transistors

PNP Transistors

2SB1172

■

Typical Characterisitics

VCE(sat) IC

hFE

VCE

VBE

120

(1)TC=Ta

(2)Without heat sink

(PC=1.3W)

(1)

(2)

Ambient temperature Ta (°C)

−12

−2

−10

−4

−8

−6

−5

−4

−3

−2

−1

Collector-emitter voltage VCE (V)

T C

=25˚C

–80mA

–60mA

–40mA

–30mA

–20mA

–12mA

–8mA

–4mA

–16mA

IB =–100mA

−2.0

−1.6

−1.2

− 0.8

− 0.4

−2

−4

−6

−10

−8

T C

=100˚C

–25˚C

25˚C

V CE =–4V

Base-emitter voltage V

BE (V)

− 0.01

− 0.1

−1

−10

−100

− 0.1

−1

−10

Collector current I C (A)

IC/IB=10

25˚C

T C

=100˚C

–25˚C

− 0.01

− 0.1

−1

−10

102

104

103

Collector current IC (A)

V CE =–4V

T C

=100˚C

25˚C

–25˚C

− 0.01

− 0.1

−1

−10

102

104

103

Collector current IC (A)

VCE=–5V

f=10MHz

TC=25˚C

− 0.01

−1

− 0.1

−1

−10

−100

−10

−100

−1000

Collector-emitter voltage VCE (V)

Non repetitive pulse

TC=25˚C

t=10ms

t=300ms

t=1ms

ICP

10−1

103

102

10−4

104

103

102

10−1

10−2

10−3

Time t (s)

(1)

(2)

(1)Without heat sink

(2)With a 50×50×2mm Al heat sink

2SB1172-P Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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