2SB1218A-R datasheet(1/2 Pages) KEXIN

Part #	2SB1218A-R

Description	PNP Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1218A

■

Features

●

High DC Current Gain

●

Complementary to 2SD1819A

1 Base

2 Emitter

3 Collector

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-45

Collector - Emitter Voltage

VCEO

-45

Emitter - Base Voltage

VEBO

-7

Collector Current - Continuous

IC

-100

mA

Collector Power Dissipation

PC

150

mW

Thermal Resistance From Junction To Ambient

RΘJA

833

℃

/W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-45

Collector- emitter breakdown voltage

VCEO

Ic= -2 mA, IB=0

-45

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-7

Collector-base cut-off current

ICBO

VCB= -40V , IE=0

-0.1

Collector-emitter cut-off current

ICEO

VCE= -20V , IB=0

-10

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-100 mA, IB=-10mA

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-100 mA, IB=-10mA

-1.2

DC current gain

hFE

VCE= -10V, IC= -2 mA

160

460

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

2.7

pF

Transition frequency

fT

VCE= -10V, IE= 1 mA,f=200MHz

80

MHz

V

uA

■

Classification of hfe

Type

2SB1218A-Q

2SB1218A-R

2SB1218A-S

Range

160-260

210-340

290-460

Marking

BQ

BR

BS

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2SB1218A-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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