1

FRE9260D, FRE9260R,

FRE9260H

19A, -200V, 0.210 Ohm, Rad Hard,

P-Channel Power MOSFETs

File Number

3269.2

Package

TO-258AA

Symbol

Features

• 19A, -200V, RDS(on) = 0.210

Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

- Meets Pre-Rad Specifications to 100KRAD(SI)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current

- 18.0nA Per-RAD(Si)/sec Typically

• Neutron

Description

The Intersil Corporation Sector has designed a series of SECOND GENERATION

hardened power MOSFETs of both N and P channel enhancement types with rat-

ings from 100V to 500V, 1A to 60A, and on resistance as low as 25m

Ω. Total dose

hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and

2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown

above. Reliability screening is available as either non TX (commercial), TX equiv-

alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group

for any desired deviations from the data sheet.

FRE9260D, R, H

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-200

V

Drain-Gate Voltage (RGS = 20k

Ω). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-200

V

Continuous Drain Current

19

12

A

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

57

A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

150

60

1.20

W

W

Inductive Current, Clamped, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

57

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

19

A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

57

A

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

-55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

June 1998