CS48N80 datasheet(2/5 Pages) THINKISEMI

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Table 2.

Thermal Characteristic

Symbol

Parameter

Value

Unit

RJC

Thermal Resistance,Junction-to-Case

1.35

℃

Table 3.

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

On/Off States

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=250μA

IDSS

Zero Gate Voltage Drain Current(Tc=25℃)

VDS=68V,VGS=0V

μA

IDSS

Zero Gate Voltage Drain Current(Tc=125℃)

VDS=68V,VGS=0V

μA

IGSS

Gate-Body Leakage Current

VGS=±25V,VDS=0V

±100

VGS(th)

Gate Threshold Voltage

VDS=VGS,ID=250μA

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=40A

5.5

5.8

mΩ

Dynamic Characteristics

gFS

Forward Transconductance

VDS=10V,ID=40A

Ciss

Input Capacitance

3200

Coss

Output Capacitance

350

Crss

Reverse Transfer Capacitance

VDS=25V,VGS=0V,

f=1.0MHz

320

Total Gate Charge

76.1

Qgs

Gate-Source Charge

14.9

Qgd

Gate-Drain Charge

VDS=50V,ID=40A,

VGS=10V

31.6

Switching Times

td(on)

Turn-on Delay Time

Turn-on Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

VDD=30V,ID=2A,RL=15Ω

VGS=10V,RG=2.5Ω

Source-Drain Diode Characteristics

ISD

Source-Drain Current(Body Diode)

ISDM

Pulsed Source-Drain Current(Body Diode)

348

VSD

Forward on Voltage

(Note 1)

TJ=25℃,ISD=40A,VGS=0V

0.8

0.95

trr

Reverse Recovery Time

(Note 1)

Qrr

Reverse Recovery Charge

(Note 1)

TJ=25℃,IF=75A

di/dt=100A/μs

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)

Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃

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