4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

FRL130D, FRL130R,

FRL130H

8A, 100V, 0.180 Ohm, Rad Hard,

N-Channel Power MOSFETs

File Number

3218.1

Package

TO-205AF

Symbol

Features

• 8A, 100V, RDS(on) = 0.180

Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

- Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current

- 1.5nA Per-RAD(Si)/sec Typically

• Neutron

Description

The Intersil Corporation has designed a series of SECOND GENERATION hard-

ened power MOSFETs of both N and P channel enhancement types with ratings

from 100V to 500V, 1A to 60A, and on resistance as low as 25m

Ω. Total dose

hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness

rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and

2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired

deviations from the data sheet.

FRL130D, R, H

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

100

V

Drain-Gate Voltage (RGS = 20k

Ω). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

V

Continuous Drain Current

8

5

A

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

24

A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

25

10

0.20

W

W

Inductive Current, Clamped, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

24

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

8

A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

24

A

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

-55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

June 1998