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2SB1386-R Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SB1386-R
Description  PNP Transistors
PDF  3 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB1386-R Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB1386-R Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SB1386-R Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd 2SB1386-R Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
Transistors
2SB1386
■
Typical Characterisitics
Fig.10 Collector-emitter saturation
voltage vs. collector current ( )
COLLECTOR CURRENT : IC
(A)
1 2
5 10
0.01 0.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
25°
C
lC/lB=50
25°
C
Ta=100°
C
Fig.11 Gain bandwidth product
vs. emitter current
EMITTER CURRENT : IE
(mA)
1
2
5
10
50 100 200 500
20
20
50
100
200
500
1 000
10
5
2
1
1000
Ta=25°C
VCE
6V
Fig.12 Collector output capacitance
vs. collector-base voltage
COLLECTOR TO BASE VOLTAGE : VCB
(V)
0.1 0.2
0.5 1
2
5 10 20
50
1000
500
200
100
50
10
20
Ta=25°C
f=1MHz
IE=
0A
Fig.13 Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : VEB
(V)
10
20
50
100
200
500
1000
0.1
0.2
0.5
1
2
5
10
Ta=25°C
f=1MHz
IC=
0A
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0.2 0.5 1 2
5 10 20 50 100
500
200
50
5
20
2
10
1
200m
100m
50m
20m
10m
500m
100
Fig.14 Safe operation area
Ta=25°C
*Single
nonrepetitive
pulse
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PNP Transistors



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