3-221

Semiconductor

June 1998

Features

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 6.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Formerly available as type TA17750.

Description

The Discrete Products Operation of Harris Semiconductor

has developed a series of Radiation Hardened MOSFETs

specifically designed for commercial and military space

applications. Enhanced Power MOSFET immunity to Single

Event Effects (SEE), Single Event Gate Rupture (SEGR) in

particular, is combined with 100K RADS of total dose hard-

ness to provide devices which are ideally suited to harsh

space environments. The dose rate and neutron tolerance

necessary for military applications have not been sacrificed.

The Harris portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent

of

MIL-S-19500,

or

Space

equivalent

of

MIL-S-19500.

Contact

Harris

Semiconductor

for

any

desired deviations from the data sheet.

Symbol

Package

TO-254AA

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Commercial

FSJ9055D1

10K

TXV

FSJ9055D3

100K

Commercial

FSJ9055R1

100K

TXV

FSJ9055R3

100K

Space

FSJ9055R4

G

D

S

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

S

G

D

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

Copyright

File Number

4415.1

FSJ9055D,

FSJ9055R

55A, -60V, 0.029 Ohm, Rad Hard,

SEGR Resistant, P-Channel Power MOSFETs