FSPL230F datasheet(3/8 Pages) INTERSIL

3 / 8 page

4-3

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

VSD

ISD = 9A

1.5

Reverse Recovery Time

trr

ISD = 9A, dISD/dt = 100A/µs

210

Reverse Recovery Charge

QRR

1.2

µC

Electrical Speciﬁcations up to 300K RAD

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

100K RAD

300K RAD

Drain to Source Breakdown Volts

(Note 3)

BVDSS

VGS = 0, ID = 1mA

200

Gate to Source Threshold Volts

(Note 3)

VGS(TH)

VGS = VDS, ID = 1mA

2.0

4.5

1.5

4.5

Gate to Body Leakage

(Notes 2, 3)

IGSS

VGS = ±30V, VDS = 0V

100

Zero Gate Leakage

(Note 3)

IDSS

VGS = 0, VDS = 160V

µA

Drain to Source On-State Volts

(Notes 1, 3)

VDS(ON)

VGS = 12V, ID = 9A

1.58

1.71

Drain to Source On Resistance

(Notes 1, 3)

rDS(ON)12

VGS = 12V, ID = 5A

0.170

0.185

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) Note 4

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS (V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating Area

SEESOA

-10

200

-15

160

-2

200

-8

160

-5

120

NOTES:

4. Testing conducted at Brookhaven National Labs.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. TYPICAL SEE SIGNATURE CURVE

120

-20

VGS (V)

160

LET = 60MeV/mg/cm2, RANGE = 32

LET = 37MeV/mg/cm2, RANGE = 36

LET = 82MeV/mg/cm2, RANGE = 28

TEMP = 25oC

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

200

240

-4

-8

-12

-16

LET = 82 GOLD

LET = 60 IODINE

LET = 37 BROMINE

240

200

160

120

-30

-5

-10

-15

-20

-25

VGS

FSPL230R, FSPL230F

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