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FSYA9150D3 Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSYA9150D3
Description  Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
PDF  8 Pages
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSYA9150D3 Datasheet(HTML) 4 Page - Intersil Corporation

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4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
20
30
10
-100
10
1
-1
VDS, DRAIN TO SOURCE VOLTAGE (V)
-10
100
-300
TC = 25
oC
100
µs
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
CHARGE
QGD
QG
VG
QGS
BASIC GATE CHARGE WAVEFORM
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms, VGS = -12V, ID = 15A
1
10-5
10-4
10-3
10-2
10-1
100
101
0.001
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z
θJC + TC
SINGLE PULSE
0.01
0.02
0.2
0.1
0.05
0.5
10
t, RECTANGULAR PULSE DURATION (s)
FSYA9150D, FSYA9150R



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