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HA-5114/883

Die Characteristics

DIE DIMENSIONS:

99.6 x 95.3 x 19 mils

± 1 mils

2530 x 2420 x 483

µm ± 25.4µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16k

Å

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ

± 2kÅ

Nitride Thickness: 3.5kÅ

± 1.5kÅ

WORST CASE CURRENT DENSITY:

SUBSTRATE POTENTIAL (Powered Up):

Unbiased

TRANSISTOR COUNT: 175

PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

HA-5114/883

+IN2

V+

+IN1

-IN1

OUT1

OUT4

-IN4

-IN3

OUT3

OUT2

-IN2

+IN4

V-

+IN3

Spec Number

511015-883