BC850 datasheet(2/3 Pages) KEXIN

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SMD Type

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Transistors

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

BC849

BC850

Collector- emitter breakdown voltage BC849

BC850

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

VCB= 30 V , IE= 0

VCB= 30 V , IE= 0,TJ=150℃

Emitter cut-off current

IEBO

VEB= 5V , IC=0

100

Collector-emitter saturation voltage

IC=10 mA, IB=0.5mA (Note.1)

250

IC=100 mA, IB=5mA (Note.1)

200

500

Base - emitter saturation voltage

IC=10 mA, IB=0.5mA (Note.2)

700

IC=100 mA, IB=5mA (Note.2)

900

Base-Emitter Voltage

IC=2 mA, VCE=5V (Note.2)

580

660

700

IC=10 mA, VCE=5V (Note.2)

770

DC current gain

BC849B,BC850B

240

BC849C,BC850C

450

BC849B,BC850B

200

290

450

BC849C,BC850C

420

520

800

Collector capacitance

VEB= 0.5V, IE=ie= 0,f=1MHz

2.5

Emitter capacitance

VCB= 10V, IC=ic= 0,f=1MHz

IC=200uA,VCE=5V,RS=2KΩ;

f=10Hz to 15.7KHz

IC=200uA,VCE=5V,RS=2KΩ;

f=1KHz,B=200Hz

Transition frequency

VCE= 5V, IC= 10mA,f=100MHz

100

MHz

Noise Figure

hFE

VCE= 5V, IC= 10uA

VCE= 5V, IC= 2mA

ICBO

Collector-base cut-off current

VCE(sat)

VBE(sat)

VCBO

Ic= 100 μA， IE= 0

Ic= 1 mA， IB= 0

VCEO

VBE

Note.1: VBEsat decreases by about 1.7 mV/K with increasing temperature.

Note.2: VBE decreases by about 2 mV/K with increasing temperature.

DC current gain

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Classification of hfe

NPN Transistors

BC849~BC850 (KC849~KC850)

Type

BC849B

BC849C

BC850B

BC850C

Range

200-450

420-800

200-450

420-800

Marking

2B*

2C*

2F*

2G*

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