BC860 datasheet(2/3 Pages) KEXIN

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SMD Type

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Transistors

PNP Transistors

BC859~BC860 (KC859~KC860)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

BC859

-30

BC860

-50

Collector- emitter breakdown voltage

BC859

-30

BC860

-45

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

VCB= -30 V , IE=0

-1

-15

VCB= -30 V , IE=0,TJ = 150℃

-4

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

IC=-10 mA, IB=-0.5mA

-75

-300

IC=-100 mA, IB=-5mA

-250 -600

IC=-10 mA, IB=-0.5mA (Note.1)

-700

IC=-100 mA, IB=-5mA

(Note.1)

-850

VCE= -5V, IC= -2mA

(Note.2)

-600 -650 -750

VCE= -5 V, IC= -10mA (Note.2)

-820

DC current gain

BC859B:BC860B

220

475

BC859C:BC860C

420

800

Collector capacitance

VCB= -10V, IE=Ie= 0,f=1MHz

4.5

Emitter capacitance

VEB= -0.5 V, IC=Ic= 0,f=1MHz

Noise Figure

VCE= -5V, IC= -200uA,RS=2KΩ

f=30HZ to 15KHz

VCE= -5V, IC= -200uA,RS=2KΩ

f=1 KHz,B=200HZ

Transition frequency

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

VBE

hFE

VCE= -5V, IC= -2mA

ICBO

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

VCBO

VCEO

Ic= -100 μA， IE=0

Ic= -1 mA， IB=0

Collector-base cut-off current

Base - emitter voltage

Note.1: VBEsat decreases by about −1.7 mV/K with increasing temperature.

Note.2: VBE decreases by about −2 mV/K with increasing temperature.

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Classification of hfe

Type

BC859B

BC859C

BC860B

BC860C

Range

220-475

420-800

220-475

420-800

Marking

4B*

4C*

4F*

4G*

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