BCW33 datasheet(2/2 Pages) KEXIN

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SMD Type

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Transistors

NPN Transistors

BCW31~BCW33 (KCW31~KCW33)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

Collector- emitter breakdown voltage

VCEO

Ic= 2 mA， IB= 0

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

VCB= 32 V , IE= 0

100

VCB= 32 V , IE= 0,TJ=100℃

Emitter cut-off current

IEBO

VEB= 5V , IC=0

100

IC=10 mA, IB=0.5mA

120

250

IC=50 mA, IB=2.5mA

210

IC=10 mA, IB=0.5mA

750

IC=50 mA, IB=2.5mA

850

Base - emitter voltage

VBE

VCE= 5V, IC= 2mA

550

700

DC current gain

BCW31

BCW32

150

BCW33

270

DC current gain

BCW31

110

220

BCW32

200

450

BCW33

420

800

Collector output capacitance

VCB= 10V,IE=Ie=0,f=10MHz

2.5

Noise figure

IC = 200 u A; VCE = 5 V;

RS = 2kΩ;f = 1 kHz; B = 200 Hz

Transition frequency

VCE= 5V, IC= 10mA,f=100MHz

100

MHz

hFE

VCE= 5V, IC= 2mA

VCE= 5V, IC= 10uA

Collector-base cut-off current

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

ICBO

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Classification of hfe(2)

Type

BCW31

BCW32

BCW33

Range

110-220

200-450

420-800

Marking

D1*

D2*

D3*

BCW33 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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