BCW68F datasheet(2/3 Pages) KEXIN

2 / 3 page

SMD Type

www.kexin.com.cn

Transistors

PNP Transistors

BCW68 (KCW68)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -10 mA， IB=0

-45

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -45 V , IE=0

-20

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-20

IC=-100 mA, IB=-10mA

-0.3

IC=-500 mA, IB=-50mA

-0.7

IC=-100 mA, IB=-10mA

-1.25

IC=-500 mA, IB=-50mA

-2

VCE= -10V, IC= -0.1mA

VCE= -1V, IC= -10mA

120

180

VCE= -1V, IC= -100mA

100

250

160

400

250

630

VCE= -2V, IC= -500mA

100

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

Collector input capacitance

Cib

VEB= -0.5V, IE= 0,f=1MHz

Transition frequency

VCE= -5V, IC= -50mA,f=20MHz

200

MHz

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

DC current gain

hFE(1)

hFE(2)

hFE(3)

hFE(4)

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Classification of hfe(3)

Type

BCW68F

BCW68G

BCW68H

Range

100-250

160-400

250-630

Marking

BCW68F Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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