BCW70 datasheet(2/2 Pages) KEXIN

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SMD Type

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Transistors

PNP Transistors

BCW69~BCW70 (KCW69~KCW70)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-50

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-45

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

VCB= -20 V , IE=0

-100

VCB= -20 V , IE=0,TJ=100℃

-10

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

IC=-10 mA, IB=-0.5mA

-80

IC=-50 mA, IB=-2.5mA(Note.1)

-150

IC=-10 mA, IB=-0.5mA

-720

IC=-50 mA, IB=-2.5mA(Note.1)

-810

Base - emitter voltage

VBE

VCE= -5V, IC= -2mA

-600

-750

DC current gain

BCW69

BCW70

150

DC current gain

BCW69

120

260

BCW70

215

500

Collector capacitance

VCB= -10V,IE=ie=0, f=1MHz

4.5

Noise figure

VCE= -5V,IC=-200uA,RS=2KΩ

f=1MHz,B=200Hz

Transition frequency

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

Collector-base cut-off current

ICBO

hFE

VCE= -5V, IC= -10uA

VCE= -5V, IC= -2mA

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

Note.1: Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

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Classification of hfe(2)

Type

BCW69

BCW70

Range

120-260

215-500

Marking

H1*

H2*

-300

BCW70 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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