BCX71H datasheet(2/2 Pages) KEXIN

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SMD Type

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Transistors

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-45

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-45

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

VCB= -45 V , IE=0

-20

VCB= -45 V , IE=0,Tamb = 150℃

-20

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-20

IC=-10 mA, IB=- 0.25mA

-60

-250

IC=-50 mA, IB= -1.25mA

(Note.1) -120

-550

IC=-10 mA, IB=- 0.25mA

-600

-850

IC=-50 mA, IB= -1.25mA

(Note.1)

-680

-1050

VCE= -5V, IC= -2mA

-600 -650 -750

VCE= -5V, IC= -10uA

-550

VCE= -1V, IC= -50mA (Note.1)

-720

DC current gain

BCX71H

BCX71J

BCX71K

100

DC current gain

BCX71H

180

310

BCX71J

250

460

BCX71K

380

630

DC current gain

BCX71H

BCX71J

100

BCX71K

110

Collector capacitance

VCB=-10V,IE=Ie=0,f=1MHz

4.5

Emitter capacitance

VEB=-0.5 V,IC=Ic=0,f=1MHz

Noise figure

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ;f = 1 kHz; B = 200 Hz

Transition frequency

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

VCE= -5V, IC= -10uA

VCE= -5V, IC= -2mA

VCE= -1V, IC= -50mA (Note.1)

Collector-base cut-off current

ICBO

Base - emitter voltage

VBE

VCE(sat)

Collector-emitter saturation voltage

Base - emitter saturation voltage

VBE(sat)

hFE

Note.1: Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

PNP Transistors

BCX71 (KCX71)

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Classification of hfe(2)

Type

BCX71H

BCX71J

BCX71K

Range

180-310

250-460

380-630

Marking

BH*

BJ*

BK*

BCX71H Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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