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Die Characteristics

DIE DIMENSIONS:

1650

µm x 2540µm x 483µm

METALLIZATION:

Type: Metal 1: AlCu (1%)

Thickness: Metal 1: 8k

Å

Type: Metal 2: AlCu (1%)

Thickness: Metal 2: 16k

Å

SUBSTRATE POTENTIAL (POWERED UP):

V-

PASSIVATION:

Type: Nitride

Thickness: 4k

Å

TRANSISTOR COUNT:

124

PROCESS:

High Frequency Bipolar Dielectric Isolation

Metallization Mask Layout

HA5022

-IN1

V+

OUT1

+IN2

DIS2

V-

NC

OUT2

-IN2

DIS1

+IN1

HA5022