BCX70 datasheet(2/2 Pages) KEXIN

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SMD Type

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Transistors

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

VCB= 45 V , IE= 0

VCB= 45 V , IE= 0,Tamb = 150℃

Emitter cut-off current

IEBO

VEB= 4V , IC=0

IC=10 mA, IB=0.25mA

350

IC=50 mA, IB=1.25mA

100

550

IC=10 mA, IB=0.25mA

600

850

IC=50 mA, IB=1.25mA

700

1050

VCE= 5V, IC= 10uA

520

VCE= 5V, IC= 2mA

550

650

750

VCE= 1V, IC= 50mA

780

DC current gain

BCX70G

BCX70H

BCX70J

BCX70K

100

DC current gain

BCX70G

120

220

BCX70H

180

310

BCX70J

250

460

BCX70K

380

630

DC current gain

BCX70G

BCX70H

BCX70J

BCX70K

100

Collector capacitance

VCB= 10V, IE=Ie=0,f=1MHz

1.7

Emitter capacitance

VEB= 0.5 V, IC=Ic=0,f=1MHz

Noise figure

IC = 200 u A; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

Transition frequency

VCE= 5V, IC= 10mA,f=100MHz

100

250

MHz

VBE(sat)

Collector-base cut-off current

ICBO

Collector-emitter saturation voltage

VCE(sat)

Base - emitter voltage

VBE

hFE

VCE= 5V, IC= 10uA

VCE= 5V, IC= 2mA

VCE= 1V, IC= 50mA

Base - emitter saturation voltage

NPN Transistors

BCX70 (KCX70)

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Classification of hfe(2)

Type

BCX70G

BCX70H

BCX70J

BCX70K

Range

120-220

180-310

250-460

380-630

Marking

AG*

AH*

AJ*

AK*

BCX70 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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