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Die Characteristics

DIE DIMENSIONS:

2010

µm x 3130µm x 483µm

METALLIZATION:

Type: Metal 1: AlCu (1%)

Thickness: Metal 1: 8k

Å

Metal 2: AlCu (1%)

Metal 2: 16k

Å

SUBSTRATE POTENTIAL (Powered Up):

V-

PASSIVATION:

Type: Nitride

Thickness: 4k

Å

TRANSISTOR COUNT:

248

PROCESS:

High Frequency Bipolar Dielectric Isolation

Metallization Mask Layout

HA5025

+IN3

V-

+IN4

+IN1

V+

+IN2

HA5025