2SA733 datasheet(1/2 Pages) MAKOSEMI

Part #	2SA733

Description	Collector-Base Voltage

PDF	2 Pages

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Manufacturer	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Direct Link	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Collector-Base Voltage

Complement to C945

MARKING: CS

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-60

V

Collector-Emitter Voltage

V

CEO

-50

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

0.15

A

Collector Power Dissipation

PC

0.2

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -5uA,IE=0

-60

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA ,

IB=0

-50

V

Emitter-base breakdown voltage

VEBO

IE= -50uA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -60 V ,

IE=0

-0.1

uA

Emitter cut-off current

IEBO

VEB= -5 V ,

IC=0

-0.1

uA

DC current gain

hFE

VCE= -6 V, IC= -1mA

120

475

Collector-emitter saturation voltage

VCE(sat)

IC= -100mA, IB=- 10mA

-0.18

-0.3

V

Base-emitter voltage

VBE(on)

VCE=-6V,IC=-1.0mA

-0.58

-0.62

-0.68

V

Transition frequency

fT

VCE=-6V,IC=-10mA

50

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHZ

4.5

7

pF

Noise figure

NF

VCE=-6V,IC=-0.3mA,

Rg=10kΩ,f=100HZ

6

20

dB

CLASSIFICATIONOF

hFE

Rank

L

H

Range

120-220

220-475

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

A733

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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