2SA1662 datasheet(1/2 Pages) MAKOSEMI

Part #	2SA1662

Description	Complementary to KTC4374

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Direct Link	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

•

Complementary to KTC4374

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current -Continuous

IC

-400

mA

Collector Power dissipation

PC

500

mW

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-1mA,IE=0

-80

V

Collector-emitter breakdown voltage

VCEO

IC=-10mA,IB=0

-80

V

Emitter-base breakdown voltage

VEBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-80V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE(1)

VCE=-2V,IC=-50mA

70

240

hFE(2)

VCE=-2V,IC=-200mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-200mA,IB=-20mA

-0.4

V

Base-emitter voltage

VBE

VCE=-2V,IC=-5mA

-0.55

-0.8

V

Transition frequency

fT

VCE=-10V,IC=-10mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

14

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

70-140

120-240

Marking

FO

FY

2SA1662 (PNP)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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