IRF7805Z datasheet(2/6 Pages) KEXIN

2 / 6 page

SMD Type

www.kexin.com.cn

MOSFET

■

Electrical Characteristics Ta = 25℃

N-Channel Enhancement MOSFET

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

VDS=24V, VGS=0V

VDS=24V, VGS=0V, TJ=125℃

150

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

1.35

2.25

VGS=10V, ID=16A

5.5

6.8

VGS=4.5V, ID=13A

7.0

8.7

Forward Transconductance

gFS

VDS=15V, ID=12A

Input Capacitance

Ciss

2080

Output Capacitance

Coss

480

Reverse Transfer Capacitance

Crss

220

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

1.0

2.1

Total Gate Charge

Gate Source Charge

Qgs1

4.7

Gate Source Charge

Qgs2

1.6

Gate Drain Charge

Qgd

6.2

Gate Charge Overdrive

Qgodr

5.5

Switch Charge(Qgd+Qgs2)

QSW

7.8

Output Charge

QOSS

VGS=0V, VDS=16V

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

3.7

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Maximum Body-Diode Continuous Current

3.1

Pulsed Source Gurrent

ISM

120

Diode Forward Voltage

VSD

IS=12A,VGS=0V

Zero Gate Voltage Drain Current

IDSS

mΩ

RDS(On)

Static Drain-Source On-Resistance

VGS=4.5V, VDS=15V, ID=12A

VGS=4.5V, VDS=15V,ID=12A

IF= 12A, dI/dt= 100A/μs,VDD=15V

VGS=0V, VDS=15V, f=1MHz

IRF7805Z (KRF7805Z)

IRF7805Z Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

IRF7805Z Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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