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SMK0460FG Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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SMK0460FG Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
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2 / 8 page  Rev. date: 23-JUN-14 KSD-T0O151-000 www.auk.co.kr 2 of 8 Thermal Characteristics Characteristic Symbol Rating Unit Thermal resistance, junction to case Rth(j-c) Max. 4.16 C/W Thermal resistance, junction to ambient Rth(j-a) Max. 62.5 Electrical Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 600 - - V Gate threshold voltage VGS(th) VDS=10V, ID=250uA 2 - 4 V Drain-source cut-off current IDSS VDS=600V, VGS=0V - - 1 uA VDS=600V, Tc=150C - - 100 uA Gate leakage current IGSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance RDS(ON) VGS=10V, ID=2A - 2.1 2.5 Forward transfer conductance (Note 3) gfs VDS=10V, ID=2A - 4 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 670 848 pF Output capacitance Coss - 57 71 Reverse transfer capacitance Crss - 9.8 12.2 Turn-on delay time (Note 3,4) td(on) VDS=300V, ID=4A, RG=25Ω - 10 - ns Rise time (Note 3,4) tr - 42 - Turn-off delay time (Note 3,4) td(off) - 38 - Fall time (Note 3,4) tf - 46 - Total gate charge (Note 3,4) Qg VDS=480V, VGS=10V, ID=4A 9.6 12 15 nC Gate-source charge (Note 3,4) Qgs 3 4 5 Gate-drain charge (Note 3,4) Qgd 2.3 3 3.8 Source-Drain Diode Ratings and Characteristics (T C=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS Integral reverse diode in the MOSFET - - 4 A Source current (Pulsed) ISM - - 16 A Forward voltage VSD VGS=0V, ISD=4A - - 1.4 V Reverse recovery time (Note 3,4) trr ISD=4A, VGS=0V dIF/dt=100A/us - 300 - ns Reverse recovery charge (Note 3,4) Qrr - 2.2 - uC Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=25.9mH, IAS=4A, VDD=50V, RG=25, Starting TJ=25C 3. Pulse test: Pulse width≤300us, Duty cycle≤2% 4. Essentially independent of operating temperature typical characteristics SMK0460FG |
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