The UPC2714T and UPC2715T are Silicon Monolithic inte-

grated circuits manufactured using the NESAT III process.

These devices are suitable for applications which require low

power consumption and wide frequency operation. They are

designed for low cost, low power consumption gain stages in

cellular radios, GPS receivers, and PCN applications.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

DESCRIPTION

LOW POWER CONSUMPTION

SILICON MMIC AMPLIFIER

UPC2714T

UPC2715T

FEATURES

• LOW POWER CONSUMPTION:

• HIGH POWER GAIN: 20 dB (UPC2715T)

• WIDE FREQUENCY RESPONSE:

2 GHz (UPC2714T)

• INTERNAL CURRENT REGULATION MINIMIZES GAIN

CHANGE OVER TEMPERATURE

• SUPER SMALL PACKAGE

• TAPE AND REEL PACKAGING OPTION AVAILABLE

GAIN vs. FREQUENCY

UPC2715

UPC2714

0

0.5

1.0

1.5

2.0

20

15

10

5

0

Frequency, f (GHz)

PART NUMBER

UPC2714T

UPC2715T

PACKAGE OUTLINE

T06

T06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

Circuit Current

mA

3.3

4.5

5.7

3.3

4.5

5.7

Small Signal Gain

dB

8.5

11.5

15.5

16

19

23

Upper Limit Operating Frequency

GHz

1.4

1.8

0.9

1.2

Gain Flatness, f = 0.1~ 0.6 GHz

dB

±1.0

±1.0

Saturated Output Power

dBm

-10

-7

-9

-6

NF

Noise Figure

dB

5.0

6.5

4.5

6.0

Input Return Loss

dB

10

13

12

17

Output Return Loss

dB

5

8

5

8

ISOL

Isolation

dB

22

27

28

33

Gain-Temperature Coefficient

dB/

°C

+0.006

+0.006

Thermal Resistance (Junction to Ambient)

°C/W

200

200

California Eastern Laboratories