1

December 1997

HIP0061

60V, 3.5A, 3-Transistor Common Source

ESD Protected Power MOSFET Array

Features

• Three 3.5A Power MOS N-Channel Transistors

• Output Voltage to 60V

• Pulsed Current . . . . . . . . . . . . . . . . 10A Each Transistor

• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor

• Grounded Tab Eliminates Heat Sink Isolation

Applications

• Automotive

• Appliance

• Industrial Control

• Robotics

• Relay, Solenoid, Lamp Drivers

Description

The HIP0061 is a power MOSFET array that consists of

three matched N-Channel enhancement mode MOS transis-

tors connected in a common source configuration. The

advanced Harris PASIC2 process technology used in this

product utilizes efficient geometries that provides outstand-

ing device performance and ruggedness.

The HIP0061 is designed to integrate three power devices in

one chip thus providing board layout area and heat sink sav-

ings for applications such as Motor Controls, Lamps,

Solenoids and Resistive Loads.

Symbol

Ordering Information

PART NUMBER

TEMP.

PACKAGE

PKG.

NO.

HIP0061AS1

-40 to 125

7 Ld Staggered

Vertical SIP

Z7.05C

HIP0061AS2

-40 to 125

7 Ld Gullwing SIP

Z7.05B

DRAIN3

GATE3

DRAIN1

GATE1

DRAIN2

SOURCE, TAB

GATE2

4

1

2

3

5

6

7

Pinouts

HIP0061AS1

(SIP - VERTICAL)

TOP VIEW

HIP0061AS2

(SIP - GULLWING)

TOP VIEW

7

DRAIN3

6

GATE3

5

DRAIN2

4

SOURCE

3

GATE2

2

DRAIN1

1

GATE 1

TAB

TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4

TAB (SOURCE) INTERNALLY CONNECTED TO PIN 4

7

DRAIN3

6

GATE3

5

DRAIN2

4

SOURCE

3

GATE2

2

DRAIN1

1

GATE 1

TAB

File Number

3982.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207