BSS87 datasheet(1/2 Pages) KEXIN

Part #	BSS87

Description	N-Channel MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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MOSFET

N-Channel MOSFET

BSS87 (KSS87)

■

Features

●

VDS (V) = 200V

●

ID = 0.28 A (VGS = 10V)

●

RDS(ON) ＜ 6Ω (VGS = 10V)

●

High-speed switching

●

No secondary breakdown.

1.70 0.1

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

200

Gate-Source Voltage

VGS

±

20

Continuous Drain Current

ID

0.28

Pulsed Drain Current

IDM

1.1

Power Dissipation

PD

1

W

Thermal Resistance.Junction- to-Ambient

RthJA

125

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-65 to 150

V

A

℃

■

Electrical Characteristics Ta = 25℃

s

d

g

■

Marking

KA

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

200

V

VDS=60V, VGS=0V

0.2

VDS=200V, VGS=0V

60

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=1mA

0.8

2.8

V

Static Drain-Source On-Resistance

RDS(On)

VGS=10V, ID=0.4A

6

Ω

Forward Transconductance

gFS

VDS=25V, ID=0.4A

350

mS

Input Capacitance

Ciss

60

Output Capacitance

Coss

25

Reverse Transfer Capacitance

Crss

10

Turn-On DelayTime

td(on)

10

Turn-Off DelayTime

td(off)

25

ns

Zero Gate Voltage Drain Current

IDSS

uA

VGS=0 to 10V, VDS=50V, ID=250mA

VGS=0V, VDS=25V

pF

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BSS87 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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