3

SourceTo Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Rectifier

-

-

28

A

Pulse Source to Drain Current

(Note 3)

-

-

110

A

Drain to Source Diode Voltage (Note 2)

-

-

2.5

V

Reverse Recovery Time

70

150

300

ns

Reverse Recovery Charge

0.44

0.9

1.9

µC

NOTES:

2. Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

25

50

75

100

125

150

175

0

0

0

0.2

0.4

0.6

0.8

1.0

1.2

30

24

18

12

6

0

25

50

75

100

125

150

175

1

0.1

0.1

1

10

NOTES:

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

2

IRF140