Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

IRF250 Datasheet(PDF) 2 Page - Intersil Corporation

Part # IRF250
Description  30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF250 Datasheet(HTML) 2 Page - Intersil Corporation

  IRF250 Datasheet HTML 1Page - Intersil Corporation IRF250 Datasheet HTML 2Page - Intersil Corporation IRF250 Datasheet HTML 3Page - Intersil Corporation IRF250 Datasheet HTML 4Page - Intersil Corporation IRF250 Datasheet HTML 5Page - Intersil Corporation IRF250 Datasheet HTML 6Page - Intersil Corporation IRF250 Datasheet HTML 7Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF250
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
30
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
19
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
120
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
910
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
200
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX,VGS = 10V
30
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 16A (Figures 8, 9)
-
0.07
0.085
Ω
Forward Transconductance (Note 2)
gfs
VDS ≥ 50V, ID = 16V (Figure 12)
13
19
-
S
Turn-On Delay Time
tD(ON)
VDD = 100V, ID ≈ 30A, RG = 6.2Ω, RL = 3.2Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
-20
30
ns
Rise Time
tr
-
120
180
ns
Turn-Off Delay Time
tD(OFF)
-
70
100
ns
Fall Time
tf
-
80
120
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 30A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
-
79
120
nC
Gate to Source Charge
Qgs
-13
-
nC
Gate to Drain “Miller” Charge
Qgd
-42
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
2000
-
pF
Output Capacitance
COSS
-
800
-
pF
Reverse-Transfer Capacitance
CRSS
-
300
-
pF
Internal Drain Inductance
LD
Measured between the
Contact Screw on Header
that is Closer to Source
and Gate Pins and
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
-
0.83
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRF250



Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com