IRF247 datasheet(2/7 Pages) INTERSIL

2 / 7 page

5-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF244

IRF245

IRF246

IRF247

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS

250

275

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR

250

275

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

8.8

8.0

8.8

8.0

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD

125

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS

550

Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . TL

Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .Tpkg

300

260

300

260

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA

(Figure 10)

IRF244, IRF245

250

IRF246, IRF247

275

Gate to Threshold Voltage

VGS(TH) VGS = VDS, ID = 250µA

2.0

4.0

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V,

TJ = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V

IRF244, IRF246

IRF245, IRF247

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On-State Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 8A, (Figures 8, 9)

IRF244, IRF246

0.20

0.28

Ω

IRF245, IRF247

0.24

0.34

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 50V, ID = 8A, (Figure 12)

6.7

Turn-On Delay Time

td(ON)

VDD = 125V, ID ≈ 14A, RG = 9.1Ω, RL = 8.9Ω

(Figures 17, 18) MOSFET Switching Times

are Essentially Independent of Operating

Temperature

-16

24ns

Rise Time

100

Turn-Off Delay Time

td(OFF)

-53

80ns

Fall Time

-49

74ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 14A, VDS = 0.8 x Rated

BVDSS, Ig(REF) = 1.5mA,

(Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating

Temperature

-39

Gate to Source Charge

Qgs

6.6

Gate to Drain “Miller” Charge

Qgd

-20-

IRF244, IRF245, IRF246, IRF247

IRF247 Datasheet(PDF) 2 Page - Intersil Corporation

IRF247 Datasheet(HTML) 2 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL