IRF7205 datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

IRF7205 (KRF7205)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

VDS=-24V, VGS=0V

-1

VDS=-15V, VGS=0V, TJ=70℃

-5

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-1

-3

VGS=-10V, ID=-4.6A

(Note.1)

VGS=-4.5V, ID=-2A

(Note.1)

130

Forward Transconductance

gFS

VDS=-15V, ID=-4.6A

(Note.1)

6.6

Input Capacitance

Ciss

870

Output Capacitance

Coss

720

Reverse Transfer Capacitance

Crss

220

Total Gate Charge

Gate Source Charge

Qgs

5.2

Gate Drain Charge

Qgd

7.5

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

150

Turn-Off Fall Time

100

Body Diode Reverse Recovery Time

trr

100

Body Diode Reverse Recovery Charge

Qrr

180

Internal Drain Inductance

2.5

Internal Source Inductance

Continuous Source Current (Body Diode)

-2.5

Pulsed Source Current (Body Diode)

ISM

-15

Diode Forward Voltage

VSD

IS=-1.25A,VGS=0V, TJ=25℃ (Note.1)

-1.2

IF=-4.6A, dI/dt=100A/μs,TJ=25℃

Zero Gate Voltage Drain Current

IDSS

mΩ

VDS=-15V,ID=-1A, RL=10Ω,RG=6Ω

(Note.1)

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=-10V, VDS=-15V, ID=-4.6A

(Note.1)

Note.1: Pulse width ≤ 300us; duty cycle ≤ 2%.

Between lead,6mm(0.25in.)

from package and center

of die contact

p-n junction diode.

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Marking

7205

KC****

Marking

IRF7205 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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