IRF9130 datasheet(2/7 Pages) INTERSIL

2 / 7 page

5-9

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF9130

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-100

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-100

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

-12

-7.5

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

-48

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

500

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to T

J = 125

oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = -250µA, VGS = 0V, (Figure 10)

-100

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250µA

-2

-4

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = -10V

-12

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = -6.5A, VGS = -10V, (Figures 8, 9)

0.25

0.30

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON)MAX, ID = -6.5A

(Figure 12)

3.7

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 50Ω

RL = 5.7Ω (Figures 17, 18)

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-30

Rise Time

140

Turn-Off Delay Time

td(OFF)

140

Fall Time

140

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = -10V, ID = -15A, VDS = 0.8 x Rated BVDSS

Ig(REF) = -1.5mA (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

-25

Gate to Source Charge

Qgs

-13

Gate to Drain “Miller” Charge

Qgd

-12

Input Capacitance

CISS

VDS = -25V, VGS = 0V, f = 1MHz

(Figure 11)

500

Output Capacitance

COSS

300

Reverse Transfer Capacitance

CRSS

100

Internal Drain Inductance

Measured Between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins and

the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

5.0

Internal Source Inductance

Measured From the

Source Lead, 6mm

(0.25in) From the Flange

and the Source

Bonding Pad

12.5

Thermal Resistance Junction to Case

RθJC

1.67

oC/W

Thermal Resistance Junction to Ambient

RθJA

Typical Socket Mount

oC/W

IRF9130

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