IRF9232 datasheet(2/7 Pages) INTERSIL

2 / 7 page

6-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF9230

IRF9231

IRF9232

IRF9233

UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS

-200

-150

-200

-150

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS

-200

-150

-200

-150

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

-6.5

-4.0

-6.5

-4.0

-5.5

-3.5

-5.5

-3.5

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM

-26

-22

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS

500

Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg

300

260

300

260

300

260

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to T

J = 125

oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = -250µA, VGS = 0V, (Figure10)

IRF9230, IRF9232

-200

IRF9231, IRF9233

-150

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250µA

-2

-4

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V

TC = 125

-250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON) MAX, VGS = -10V,

(Figure 7)

IRF9230, IRF9231

-6.5

IRF9232, IRF9233

-5.5

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = -3.5A, VGS = -10V, (Figures 8, 9)

IRF9230, IRF9231

0.5

0.8

Ω

IRF9232, IRF9233

0.8

1.2

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A,

(Figure 12)

2.2

3.5

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A,

RG = 50Ω, VGS = -10V, (Figure 17, 18)

RL = 14.7Ω for VDSS = 200V

RL = 10.9Ω for VDSS = 150V

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-30

Rise Time

100

Turn-Off Delay Time

td(OFF)

100

Fall Time

-40

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated

BVDSS, (Figures 14, 19, 20)

Gate Charge is Essentially Independent

of Operating Temperature

-31

Gate to Source Charge

Qgs

-18

Gate to Drain “Miller” Charge

Qgd

-13

IRF9230, IRF9231, IRF9232, IRF9233

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