5-3

IRFAC40, IRFAC42

Input Capacitance

-

1300

-

pF

Output Capacitance

160

pF

Reverse Transfer Capacitance

30

pF

Internal Drain Inductance

Measured Between

the Contact Screw on

the Flange that is

Closer to Source and

Gate Pins and the

Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

5.0

-

nH

Internal Source Inductance

Measured From The

Source Lead, 6mm

(0.25in) From the

Flange and the Source

Bonding Pad

-13

-

nH

Thermal Resistance Junction to Case

-

-

1.0

Thermal Resistance Junction to Ambient

Free Air Operation

-

-

30

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

-

-

6.2

A

Pulse Source to Drain Current

(Note 3)

-

-

25

A

Source to Drain Diode Voltage (Note 2)

-

-

1.5

V

Reverse Recovery Time

200

450

940

ns

Reverse Recovered Charge

1.8

3.8

7.9

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

G

D

S

G

D

S