IRFD220 datasheet(2/6 Pages) INTERSIL

2 / 6 page

4-288

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFD220

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

200

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

200

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

0.8

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

6.4

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

1.0

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.008

W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to T

J = 125

oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 9)

200

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS >ID(ON) xrDS(ON)MAX,VGS = 10V (Figure 6)

0.8

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 0.4A, VGS = 10V (Figures 7, 8)

0.5

0.8

Ω

Forward Transconductance (Note 2)

gfs

VDS > ID(ON) x rDS(ON)MAX, ID = 0.4A (Figure 11)

0.5

1.1

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID ≈ 0.8A,

RG = 9.1Ω, RL = 74Ω, VGS = 10V,

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-20

Rise Time

-30

Turn-Off Delay Time

td(OFF)

100

Fall Time

-30

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID ≈ 0.8A, VDS = 0.8 x Rated BVDSS

IG(REF) = 1.5mA, (Figure 13) Gate Charge is

Essentially Independent of Operating Temperature

-11

Gate to Source Charge

Qgs

6.0

Gate to Drain “Miller” Charge

Qgd

5.0

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1MHz (Figure 10)

450

Output Capacitance

COSS

150

Reverse Transfer Capacitance

CRSS

-40-

Internal Drain Inductance

Measured from the Drain

Lead, 2mm (0.08in) from

Package to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

4.0

Internal Source Inductance

Measured from the Source

Lead, 2mm (0.08in) from

Header to Source Bonding

Pad

6.0

Thermal Resistance Junction to Ambient

RθJA

Free Air Operation

120

oC/W

IRFD220

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