4-301

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Rectifier

-

-

0.5

A

Pulse Source to Drain Current (Note 3)

-

-

2.0

A

Source to Drain Diode Voltage (Note 2)

-

-

1.6

V

Reverse Recovery Time

-

450

-

ns

Reverse Recovery Charge

-

3.1

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

G

D

S

0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

0

50

100

150

25

75

125

0.5

0.3

0.1

100

µs

1ms

DC

10

µs

SINGLE PULSE

2

1

0.1

00.1

0.001

1

10

100

1000

10ms

100ms

1s

0

100

200

300

1

2

3

4

5

0

6

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

IRFD320