NDS352AP datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

NDS352AP (KDS352AP)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-30

VDS=-24V, VGS=0V

-1

VDS=-24V, VGS=0V, TJ=125℃

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=±20V

100

VDS=VGS ID=-250μA

-0.8

-1.7

-2.5

VDS=VGS ID=-250μA ,TJ=125℃

-0.5

-1.4

-2.2

VGS=-4.5V, ID=-0.9A

450

500

VGS=-4.5V, ID=-0.9A TJ=125℃

650

700

VGS=-10V, ID=-1A

250

300

On state drain current

ID(ON)

VGS=-4.5V, VDS=-5V

-2

Forward Transconductance

gFS

VDS=-5V, ID=-0.9A

1.9

Input Capacitance

Ciss

135

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Gate Source Charge

Qgs

0.5

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

-0.42

Pulsed Drain-Source Diode Forward Current

ISM

-10

Diode Forward Voltage

VSD

IS=--0.42A,VGS=0V (Note.1)

-0.8

-1

Zero Gate Voltage Drain Current

IDSS

mΩ

RDS(On)

Static Drain-Source On-Resistance

Gate Threshold Voltage

VGS(th)

VGS=-4.5V, VDS=-10V, ID=-1A,RG=6Ω

(Note.1)

VGS=0V, VDS=-15V, f=1MHz

VGS=-4.5V, VDS=- 6 V, ID=-0.9A

(Note.1)

VGS=-10V, VDS=-10V, ID=-1A,RG=50Ω

(Note.1)

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Marking

352A

NDS352AP Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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