IRFF9130 datasheet(2/7 Pages) INTERSIL

2 / 7 page

4-102

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFF9130

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

-100

Drain to Gate Voltage (RGS = 20MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

-100

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

-6.5

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

-26

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.2

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

500

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -250µA, (Figure 10)

-100

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250µA

-2.0

-4.0

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-25

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125

-250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = -10V

-6.5

Gate to Source Leakage

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = -10V, ID = -3A, (Figures 8, 9)

0.25

0.300

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ ID(ON) x rDS(ON)MAX, ID = -3A,

(Figure 12)

2.5

3.5

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 9.1Ω,

RL = 7.4Ω for BVDSS = -100V

RL =5.8Ω for BVDSS = -80V

(Figures 17, 18) MOSFET Switching Times are Es-

sentially Independent of Operating Temperature

-30

Rise Time

140

Turn-Off Delay Time

td(OFF)

140

Fall Time

140

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS,

IG(REF) = -1.5mA, (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

-25

Gate to Source Charge

Qgs

-13

Gate to Drain “Miller” Charge

Qgd

-12

Input Capacitance

CISS

VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11)

500

Output Capacitance

COSS

300

Reverse-Transfer Capacitance

CRSS

100

Internal Drain Inductance

Measured From the

Drain Lead, 5mm (0.2in)

From Package to Center

of Die

Modified MOSFET Sym-

bol Showing the Internal

Devices

Inductances

5.0

Internal Source Inductance

Measured From The

Source Lead, 5mm

(0.2in) From Header to

Source Bonding Pad

-15

Junction to Case

RθJC

5.0

oC/W

Junction to Ambient

RθJA

Typical Socket Mount

175

oC/W

IRFF9130

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