SI4463BDY datasheet(2/5 Pages) KEXIN

2 / 5 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

SI4463BDY (KI4463BDY)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-20

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V, TJ=70℃

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=±12V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-0.6

-1.4

VGS=-10V, ID=-13.7A

VGS=-4.5V, ID=-12.3A

VGS=-2.5V, ID=-5A

On state drain current

ID(ON)

VGS=-5V, VDS=-4.5V (Note.1)

-30

Forward Transconductance

gFS

VDS=-10V, ID=-13.7A (Note.1)

Gate resistance

VGS=0V, VDS=0V, f=1MHz

2.7

Total Gate Charge

Gate Source Charge

Qgs

8.7

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

170

Turn-Off Fall Time

115

Body Diode Reverse Recovery Time

trr

IF=-2.3A, dI/dt=100A/μs

Maximum Body-Diode Continuous Current

-2.7

Diode Forward Voltage

VSD

IS=-2.7A,VGS=0V (Note.1)

-1.1

Zero Gate Voltage Drain Current

IDSS

mΩ

VDD = −10 V, RL = 10 Ω

ID=−1 A, VGEN = −4.5 V, Rg = 6 Ω

RDS(On)

Static Drain-Source On-Resistance (Note.1)

VGS=-4.5V, VDS=-10V, ID=-13.7A

Note.1: Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%.

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Marking

4463B

KC****

Marking

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